All MOSFET. IXFR180N10 Datasheet

 

IXFR180N10 Datasheet and Replacement


   Type Designator: IXFR180N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 165 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 400 nC
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO247
 

 IXFR180N10 substitution

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IXFR180N10 Datasheet (PDF)

 ..1. Size:33K  ixys
 ixfr180n10.pdf pdf_icon

IXFR180N10

HiPerFETTM Power MOSFETsIXFR 180N10 VDSS = 100 VISOPLUS247TMID25 = 165 A(Electrically Isolated Back Surface) RDS(on)= 8 mWtrr 250 nsSingle MOSFET DiePreliminary dataSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VGVGSM Transient 30 VDIsolated back surface*ID25

 5.1. Size:152K  ixys
 ixfr180n15p.pdf pdf_icon

IXFR180N10

IXFR 180N15P VDSS = 150 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 13 m ISOPLUS247TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS247 (IXFR)VDSS TJ = 25 C to 175 C 150 V E153432VDGR TJ

 6.1. Size:57K  ixys
 ixfr180n085.pdf pdf_icon

IXFR180N10

HiPerFETTM Power MOSFETsIXFR 180N085 VDSS = 85 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 7 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VVGS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25C

 6.2. Size:32K  ixys
 ixfr180n07.pdf pdf_icon

IXFR180N10

HiPerFETTM Power MOSFETsIXFR 180N07 VDSS = 70 VISOPLUS247TMID25 = 180 A(Electrically Isolated Back Surface)RDS(on)= 6 mWtrr 250 nsSingle MOSFET DiePreliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 MW 70 VGVGS Continuous 20 VDVGSM Transient 30 VIsolated back surface*ID

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Datasheet: IXFN80N50 , IXFN90N30 , IXFR10N100Q , IXFR120N20 , IXFR12N100Q , IXFR15N80Q , IXFR180N07 , IXFR180N085 , P55NF06 , IXFR24N100 , IXFR24N50 , IXFR24N50Q , IXFR26N50 , IXFR26N50Q , IXFR30N50Q , IXFR32N50Q , IXFR50N50 .

History: SIA429DJT

Keywords - IXFR180N10 MOSFET datasheet

 IXFR180N10 cross reference
 IXFR180N10 equivalent finder
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