IRHG567110 Todos los transistores

 

IRHG567110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHG567110

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 17 nC

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 110 pF

Resistencia drenaje-fuente RDS(on): 0.29 Ohm

Empaquetado / Estuche: MO-036AB

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IRHG567110 Datasheet (PDF)

1.1. irhg567110.pdf Size:181K _update

IRHG567110
IRHG567110

PD - 94246B IRHG567110 100V, Combination 2N-2P-CHANNEL RADIATION HARDENED ® RAD-Hard™ HEXFET POWER MOSFET TECHNOLOGY 4 4 THRU-HOLE (MO-036AB) # Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHG567110 100K Rads (Si) 0.29Ω 1.6A N IRHG563110 300K Rads (Si) 0.29Ω 1.6A N IRHG567110 100K Rads (Si) 0.96Ω -0.96A P IRHG563110 300K Rads (Si) 0.96Ω -

1.2. irhg567110.pdf Size:184K _international_rectifier

IRHG567110
IRHG567110

PD - 94246A IRHG567110 100V, Combination 2N-2P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY 4 4 THRU-HOLE (MO-036AB) # Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHG567110 100K Rads (Si) 0.29? 1.6A N IRHG563110 300K Rads (Si) 0.29? 1.6A N IRHG567110 100K Rads (Si) 0.96? -0.96A P IRHG563110 300K Rads (Si) 0.96? -0.96A P MO-03

 5.1. irhg597110.pdf Size:115K _update

IRHG567110
IRHG567110

PD - 94431 IRHG597110 100V, Quad P-CHANNEL RADIATION HARDENED ® RAD-Hard™ HEXFET POWER MOSFET TECHNOLOGY THRU-HOLE (MO-036AB) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96Ω -0.96A IRHG593110 300K Rads (Si) 0.98Ω -0.96A MO-036AB International Rectifier’s RAD-HardTM HEXFET® MOSFET Features: Technology provides high

5.2. irhg57110.pdf Size:119K _update

IRHG567110
IRHG567110

PD - 94432B RADIATION HARDENED IRHG57110 POWER MOSFET 100V, Quad N-CHANNEL TECHNOLOGY THRU-HOLE (MO-036) 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHG57110 100K Rads (Si) 0.29Ω 1.6A IRHG53110 300K Rads (Si) 0.29Ω 1.6A IRHG54110 500K Rads (Si) 0.29Ω 1.6A IRHG58110 1000K Rads (Si) 0.31Ω 1.6A MO-036AB International Rectifier’s R5TM technology pro

 5.3. irhg597110.pdf Size:117K _international_rectifier

IRHG567110
IRHG567110

PD - 94431 IRHG597110 100V, Quad P-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY THRU-HOLE (MO-036AB) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96? -0.96A IRHG593110 300K Rads (Si) 0.98? -0.96A MO-036AB International Rectifiers RAD-HardTM HEXFET MOSFET Features: Technology provides high performance

5.4. irhg57110.pdf Size:118K _international_rectifier

IRHG567110
IRHG567110

PD - 94432 IRHG57110 100V, Quad N-CHANNEL RADIATION HARDENED RAD-Hard HEXFET POWER MOSFET TECHNOLOGY THRU-HOLE (MO-036) 4# 4 Product Summary Part Number Radiation Level RDS(on) ID IRHG57110 100K Rads (Si) 0.29? 1.6A IRHG53110 300K Rads (Si) 0.29? 1.6A IRHG54110 600K Rads (Si) 0.29? 1.6A IRHG58110 1000K Rads (Si) 0.31? 1.6A MO-036AB International Rectifiers RAD-HardTM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 
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