IRHG567110 - параметры транзистора MOSFET, его аналоги, datasheet

IRHG567110 Datasheet (PDF)

..1. Size:181K international rectifier
irhg567110.pdf pdf_icon

PD - 94246BIRHG567110100V, Combination 2N-2P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY44 THRU-HOLE (MO-036AB) #Product Summary Part Number Radiation Level RDS(on) ID CHANNEL IRHG567110 100K Rads (Si) 0.29 1.6A N IRHG563110 300K Rads (Si) 0.29 1.6A N IRHG567110 100K Rads (Si) 0.96 -0.96A P IRHG563110 300K Rads (Si) 0.96 -

9.1. Size:119K international rectifier
irhg57110.pdf pdf_icon

PD - 94432B RADIATION HARDENED IRHG57110 POWER MOSFET100V, Quad N-CHANNELTECHNOLOGY THRU-HOLE (MO-036) 55 Product Summary Part Number Radiation Level RDS(on) IDIRHG57110 100K Rads (Si) 0.29 1.6AIRHG53110 300K Rads (Si) 0.29 1.6AIRHG54110 500K Rads (Si) 0.29 1.6AIRHG58110 1000K Rads (Si) 0.31 1.6A MO-036ABInternational Rectifiers R5TM technology pro

9.2. Size:115K international rectifier
irhg597110.pdf pdf_icon

PD - 94431IRHG597110100V, Quad P-CHANNEL RADIATION HARDENEDRAD-Hard HEXFET POWER MOSFETTECHNOLOGY THRU-HOLE (MO-036AB) 4#4 Product Summary Part Number Radiation Level RDS(on) ID IRHG597110 100K Rads (Si) 0.96 -0.96A IRHG593110 300K Rads (Si) 0.98 -0.96A MO-036ABInternational Rectifiers RAD-HardTM HEXFET MOSFETFeatures:Technology provides high

Другие MOSFET... STH320N4F6-6 , STH360N4F6-2 , STH3N150-2 , STH400N4F6-2 , STH400N4F6-6 , STH7NA90FI , STH80N10F7-2 , STH8NA80FI , IRF840 , IRHG57110 , IRHG597110 , IRHG6110 , IRHG7110 , IRHG9110 , IRHI7360SE , IRHI7460SE , IRHLF770Z4 .