IRHLG7670Z4 Todos los transistores

 

IRHLG7670Z4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHLG7670Z4
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 1.07 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 2.5 nC
   trⓘ - Tiempo de subida: 2.4 nS
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: MO-036AB

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IRHLG7670Z4 Datasheet (PDF)

 ..1. Size:300K  international rectifier
 irhlg7670z4.pdf

IRHLG7670Z4 IRHLG7670Z4

PRELIMINARYPD-97191B 2N7635M1IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENEDTECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)Product SummaryPart Number Radiation Level RDS(on) ID CHANNEL 0.6 1.07A N IRHLG7670Z4 100K Rads (Si)1.25 -0.71A P 0.6 1.07A N IRHLG7630Z4 300K Rads (Si)1.25 -0.71A PMO-036ABInternational Rectifier

 8.1. Size:202K  international rectifier
 irhlg77214.pdf

IRHLG7670Z4 IRHLG7670Z4

PD-973392N7614M1RADIATION HARDENED IRHLG77214LOGIC LEVEL POWER MOSFET 250V, Quad N-CHANNELTECHNOLOGYTHRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHLG77214 100K Rads (Si) 1.1 0.8A IRHLG73214 300K Rads (Si) 1.1 0.8AMO-036ABInternational Rectifiers R7TM Logic Level Power MOSFETsprovide simple solution to interfacing CMOS and TTL

 8.2. Size:206K  international rectifier
 irhlg77110.pdf

IRHLG7670Z4 IRHLG7670Z4

PRELIMINARYPD-971782N7612M1RADIATION HARDENED IRHLG77110LOGIC LEVEL POWER MOSFET 100V, Quad N-CHANNELTECHNOLOGYTHRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHLG77110 100K Rads (Si) 0.22 1.8A IRHLG73110 300K Rads (Si) 0.22 1.8AMO-036ABInternational Rectifiers R7TM Logic Level Power Features:MOSFETs provide simple solution to

 8.3. Size:213K  international rectifier
 irhlg7970z4.pdf

IRHLG7670Z4 IRHLG7670Z4

PRELIMINARYPD-97200B2N7628M1RADIATION HARDENED IRHLG7970Z4LOGIC LEVEL POWER MOSFET 60V, Quad P-CHANNELTHRU-HOLE (MO-036AB) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHLG7970Z4 100K Rads (Si) 1.25 -0.71A IRHLG7930Z4 300K Rads (Si) 1.25 -0.71AMO-036ABInternational Rectifiers R7TM Logic Level PowerFeatures:MOSFETs provide simple solut

 8.4. Size:207K  international rectifier
 irhlg770z4.pdf

IRHLG7670Z4 IRHLG7670Z4

PRELIMINARYPD-95865B2N7618M1RADIATION HARDENED IRHLG770Z4LOGIC LEVEL POWER MOSFET 60V, Quad N-CHANNELTECHNOLOGYTHRU-HOLE (MO-036AB)Product Summary Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6 1.07A IRHLG730Z4 300K Rads (Si) 0.6 1.07AMO-036ABInternational Rectifiers R7TM Logic Level Power Features:MOSFETs provide simple solution to

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History: CHM1304WGP | NTMFS5C609NLT1G | VSP008C03MD | DMJ70H600SH3

 

 
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