IRHLG7670Z4 MOSFET Datasheet: NP-Ch, 60V, 1.07A. Full specification with pinout and replacement list

IRHLG7670Z4 Specs and Replacement

   Type Designator: IRHLG7670Z4
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.07 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: MO-036AB

IRHLG7670Z4 substitution

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IRHLG7670Z4 datasheet

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PRELIMINARY PD-97200B 2N7628M1 RADIATION HARDENED IRHLG7970Z4 LOGIC LEVEL POWER MOSFET 60V, Quad P-CHANNEL THRU-HOLE (MO-036AB) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLG7970Z4 100K Rads (Si) 1.25 -0.71A IRHLG7930Z4 300K Rads (Si) 1.25 -0.71A MO-036AB International Rectifier s R7TM Logic Level Power Features MOSFETs provide simple solut... See More ⇒