IRHNA67160 Todos los transistores

 

IRHNA67160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHNA67160
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: SMD-2
 

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IRHNA67160 Datasheet (PDF)

 ..1. Size:188K  international rectifier
 irhna67160.pdf pdf_icon

IRHNA67160

PD-94299C2N7579U2RADIATION HARDENED IRHNA67160POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010 56A* IRHNA63160 300K Rads (Si) 0.010 56A*SMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have

 5.1. Size:192K  international rectifier
 irhna67164.pdf pdf_icon

IRHNA67160

PD-96959B2N7581U2RADIATION HARDENED IRHNA67164POWER MOSFET150V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018 56A* IRHNA63164 300K Rads (Si) 0.018 56A*SMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have

 7.1. Size:198K  international rectifier
 irhna67260.pdf pdf_icon

IRHNA67160

PD-94342G2N7583U2RADIATION HARDENED IRHNA67260POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028 56A* IRHNA63260 300K Rads (Si) 0.028 56A*SMD-2International Rectifiers R6TM technology providesFeatures:superior power MOSFETs for space applications.n Low RDS(on)The

 7.2. Size:190K  international rectifier
 irhna67264.pdf pdf_icon

IRHNA67160

PD-96990A2N7585U2RADIATION HARDENED IRHNA67264POWER MOSFET250V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040 50A IRHNA63264 300K Rads (Si) 0.040 50ASMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have i

MOSTRAR MÁS

Otros transistores... IRHLUBC7970Z4 , IRHLUC7670Z4 , IRHLUC770Z4 , IRHLUC7970Z4 , IRHLYS77034CM , IRHLYS797034CM , IRHNA57260 , IRHNA597160 , IRF4905 , IRHNA67164 , IRHNA67260 , IRHNA67264 , IRHNA7264SE , IRHNA7360SE , IRHNA7460SE , IRHNA7Z60 , IRHNB7264SE .

History: SIHFB20N50K | 2SK2109 | PTP20N40B

 

 
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