IRHNA67160 Datasheet. Specs and Replacement

Type Designator: IRHNA67160

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 1600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SMD-2

IRHNA67160 substitution

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IRHNA67160 datasheet

 ..1. Size:188K  international rectifier
 irhna67160.pdf pdf_icon

IRHNA67160

PD-94299C 2N7579U2 RADIATION HARDENED IRHNA67160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010 56A* IRHNA63160 300K Rads (Si) 0.010 56A* SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have... See More ⇒

 5.1. Size:192K  international rectifier
 irhna67164.pdf pdf_icon

IRHNA67160

PD-96959B 2N7581U2 RADIATION HARDENED IRHNA67164 POWER MOSFET 150V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018 56A* IRHNA63164 300K Rads (Si) 0.018 56A* SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have... See More ⇒

 7.1. Size:198K  international rectifier
 irhna67260.pdf pdf_icon

IRHNA67160

PD-94342G 2N7583U2 RADIATION HARDENED IRHNA67260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028 56A* IRHNA63260 300K Rads (Si) 0.028 56A* SMD-2 International Rectifier s R6TM technology provides Features superior power MOSFETs for space applications. n Low RDS(on) The... See More ⇒

 7.2. Size:190K  international rectifier
 irhna67264.pdf pdf_icon

IRHNA67160

PD-96990A 2N7585U2 RADIATION HARDENED IRHNA67264 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040 50A IRHNA63264 300K Rads (Si) 0.040 50A SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have i... See More ⇒

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Detailed specifications: IRHLUBC7970Z4, IRHLUC7670Z4, IRHLUC770Z4, IRHLUC7970Z4, IRHLYS77034CM, IRHLYS797034CM, IRHNA57260, IRHNA597160, IRF4905, IRHNA67164, IRHNA67260, IRHNA67264, IRHNA7264SE, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE

Keywords - IRHNA67160 MOSFET specs

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