IRHNA67260 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHNA67260

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 949 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SMD-2

 Búsqueda de reemplazo de IRHNA67260 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRHNA67260 datasheet

 ..1. Size:198K  international rectifier
 irhna67260.pdf pdf_icon

IRHNA67260

PD-94342G 2N7583U2 RADIATION HARDENED IRHNA67260 POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028 56A* IRHNA63260 300K Rads (Si) 0.028 56A* SMD-2 International Rectifier s R6TM technology provides Features superior power MOSFETs for space applications. n Low RDS(on) The

 5.1. Size:190K  international rectifier
 irhna67264.pdf pdf_icon

IRHNA67260

PD-96990A 2N7585U2 RADIATION HARDENED IRHNA67264 POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040 50A IRHNA63264 300K Rads (Si) 0.040 50A SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have i

 7.1. Size:188K  international rectifier
 irhna67160.pdf pdf_icon

IRHNA67260

PD-94299C 2N7579U2 RADIATION HARDENED IRHNA67160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010 56A* IRHNA63160 300K Rads (Si) 0.010 56A* SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have

 7.2. Size:192K  international rectifier
 irhna67164.pdf pdf_icon

IRHNA67260

PD-96959B 2N7581U2 RADIATION HARDENED IRHNA67164 POWER MOSFET 150V, N-CHANNEL SURFACE MOUNT (SMD-2) TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018 56A* IRHNA63164 300K Rads (Si) 0.018 56A* SMD-2 International Rectifier s R6TM technology provides superior power MOSFETs for space applications. Features These devices have

MOSTRAR MÁS

Otros transistores... IRHLUC770Z4, IRHLUC7970Z4, IRHLYS77034CM, IRHLYS797034CM, IRHNA57260, IRHNA597160, IRHNA67160, IRHNA67164, AO3401, IRHNA67264, IRHNA7264SE, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, IRHNJ57234SE, IRHNJ67434