IRHNA67260 Todos los transistores

 

IRHNA67260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHNA67260
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 949 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SMD-2
     - Selección de transistores por parámetros

 

IRHNA67260 Datasheet (PDF)

 ..1. Size:198K  international rectifier
 irhna67260.pdf pdf_icon

IRHNA67260

PD-94342G2N7583U2RADIATION HARDENED IRHNA67260POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028 56A* IRHNA63260 300K Rads (Si) 0.028 56A*SMD-2International Rectifiers R6TM technology providesFeatures:superior power MOSFETs for space applications.n Low RDS(on)The

 5.1. Size:190K  international rectifier
 irhna67264.pdf pdf_icon

IRHNA67260

PD-96990A2N7585U2RADIATION HARDENED IRHNA67264POWER MOSFET250V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040 50A IRHNA63264 300K Rads (Si) 0.040 50ASMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have i

 7.1. Size:188K  international rectifier
 irhna67160.pdf pdf_icon

IRHNA67260

PD-94299C2N7579U2RADIATION HARDENED IRHNA67160POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010 56A* IRHNA63160 300K Rads (Si) 0.010 56A*SMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have

 7.2. Size:192K  international rectifier
 irhna67164.pdf pdf_icon

IRHNA67260

PD-96959B2N7581U2RADIATION HARDENED IRHNA67164POWER MOSFET150V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018 56A* IRHNA63164 300K Rads (Si) 0.018 56A*SMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
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