All MOSFET. IRHNA67260 Datasheet

 

IRHNA67260 Datasheet and Replacement


   Type Designator: IRHNA67260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 240 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 949 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SMD-2
 

 IRHNA67260 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRHNA67260 Datasheet (PDF)

 ..1. Size:198K  international rectifier
 irhna67260.pdf pdf_icon

IRHNA67260

PD-94342G2N7583U2RADIATION HARDENED IRHNA67260POWER MOSFET200V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67260 100K Rads (Si) 0.028 56A* IRHNA63260 300K Rads (Si) 0.028 56A*SMD-2International Rectifiers R6TM technology providesFeatures:superior power MOSFETs for space applications.n Low RDS(on)The

 5.1. Size:190K  international rectifier
 irhna67264.pdf pdf_icon

IRHNA67260

PD-96990A2N7585U2RADIATION HARDENED IRHNA67264POWER MOSFET250V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67264 100K Rads (Si) 0.040 50A IRHNA63264 300K Rads (Si) 0.040 50ASMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have i

 7.1. Size:188K  international rectifier
 irhna67160.pdf pdf_icon

IRHNA67260

PD-94299C2N7579U2RADIATION HARDENED IRHNA67160POWER MOSFET100V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67160 100K Rads (Si) 0.010 56A* IRHNA63160 300K Rads (Si) 0.010 56A*SMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have

 7.2. Size:192K  international rectifier
 irhna67164.pdf pdf_icon

IRHNA67260

PD-96959B2N7581U2RADIATION HARDENED IRHNA67164POWER MOSFET150V, N-CHANNELSURFACE MOUNT (SMD-2) TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHNA67164 100K Rads (Si) 0.018 56A* IRHNA63164 300K Rads (Si) 0.018 56A*SMD-2International Rectifiers R6TM technology providessuperior power MOSFETs for space applications.Features:These devices have

SHOW MORE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APQ06SN60AF | SIHP8N50D | LND12N60

Keywords - IRHNA67260 MOSFET datasheet

 IRHNA67260 cross reference
 IRHNA67260 equivalent finder
 IRHNA67260 lookup
 IRHNA67260 substitution
 IRHNA67260 replacement

 

 
Back to Top

 


 
.