IRHNA7264SE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHNA7264SE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 180 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: SMD-2

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IRHNA7264SE datasheet

 ..1. Size:119K  international rectifier
 irhna7264se.pdf pdf_icon

IRHNA7264SE

PD - 91432C RADIATION HARDENED IRHNA7264SE POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34A SMD-2 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology

 6.1. Size:105K  international rectifier
 irhna7260.pdf pdf_icon

IRHNA7264SE

PD - 91397B IRHNA7260 200V, N-CHANNEL RADIATION HARDENED REF MIL-PRF-19500/664 POWER MOSFET RAD-Hard HEXFET SURFACE MOUNT (SMD-2) MOSFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7260 100K Rads (Si) 0.07 43A JANSR2N7433U IRHNA3260 300K Rads (Si) 0.07 43A JANSF2N7433U IRHNA4260 600K Rads (Si) 0.07 43A JANSG2N7433U I

 8.1. Size:178K  international rectifier
 irhna7360se.pdf pdf_icon

IRHNA7264SE

PD-91398B RADIATION HARDENED IRHNA7360SE POWER MOSFET 400V, N-CHANNEL SURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24A SMD-2 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology ha

 8.2. Size:121K  international rectifier
 irhna7z60.pdf pdf_icon

IRHNA7264SE

PD - 91708B RADIATION HARDENED IRHNA7Z60 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*A SMD-2 International Rectifier s RADHard HE

MOSTRAR MÁS

Otros transistores... IRHLYS77034CM, IRHLYS797034CM, IRHNA57260, IRHNA597160, IRHNA67160, IRHNA67164, IRHNA67260, IRHNA67264, IRFP260, IRHNA7360SE, IRHNA7460SE, IRHNA7Z60, IRHNB7264SE, IRHNJ57234SE, IRHNJ67434, IRHNJ67C30, IRHNJ9230