Справочник MOSFET. IRHNA7264SE

 

IRHNA7264SE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRHNA7264SE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 220 nC
   trⓘ - Время нарастания: 180 ns
   Cossⓘ - Выходная емкость: 1300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SMD-2

 Аналог (замена) для IRHNA7264SE

 

 

IRHNA7264SE Datasheet (PDF)

 ..1. Size:119K  international rectifier
 irhna7264se.pdf

IRHNA7264SE IRHNA7264SE

PD - 91432CRADIATION HARDENED IRHNA7264SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

 6.1. Size:105K  international rectifier
 irhna7260.pdf

IRHNA7264SE IRHNA7264SE

PD - 91397BIRHNA7260 200V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/664POWER MOSFETRAD-Hard HEXFETSURFACE MOUNT (SMD-2) MOSFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7260 100K Rads (Si) 0.07 43A JANSR2N7433U IRHNA3260 300K Rads (Si) 0.07 43A JANSF2N7433U IRHNA4260 600K Rads (Si) 0.07 43A JANSG2N7433U I

 8.1. Size:178K  international rectifier
 irhna7360se.pdf

IRHNA7264SE IRHNA7264SE

PD-91398BRADIATION HARDENED IRHNA7360SEPOWER MOSFET 400V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

 8.2. Size:121K  international rectifier
 irhna7z60.pdf

IRHNA7264SE IRHNA7264SE

PD - 91708BRADIATION HARDENEDIRHNA7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*ASMD-2International Rectifiers RADHard HE

 8.3. Size:124K  international rectifier
 irhna7064.pdf

IRHNA7264SE IRHNA7264SE

PD - 91416BIRHNA7064JANSR2N7431URADIATION HARDENED60V, N-CHANNELPOWER MOSFETREF: MIL-PRF-19500/664SURFACE MOUNT(SMD-2) RAD Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID QPL Part Number IRHNA7064 100K Rads (Si) 0.015 75*A JANSR2N7431U IRHNA3064 300K Rads (Si) 0.015 75*A JANSF2N7431U IRHNA4064 600K Rads (Si) 0.015 75*A JANSG2N7

 8.4. Size:107K  international rectifier
 irhna7160.pdf

IRHNA7264SE IRHNA7264SE

PD - 91396CIRHNA7160 100V, N-CHANNELRADIATION HARDENEDREF: MIL-PRF-19500/664POWER MOSFETRAD-Hard HEXFETSURFACE MOUNT (SMD-2) MOSFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA7160 100K Rads (Si) 0.04 51A JANSR2N7432U IRHNA3160 300K Rads (Si) 0.04 51A JANSF2N7432U IRHNA4160 600K Rads (Si) 0.04 51A JANSG2N7432U I

 8.5. Size:127K  international rectifier
 irhna7460se.pdf

IRHNA7264SE IRHNA7264SE

PD - 91399BRADIATION HARDENED IRHNA7460SEPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7460SE 100K Rads (Si) 0.32 20ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a

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