IRHNA7460SE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHNA7460SE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 730 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm

Encapsulados: SMD-2

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IRHNA7460SE datasheet

 ..1. Size:127K  international rectifier
 irhna7460se.pdf pdf_icon

IRHNA7460SE

PD - 91399B RADIATION HARDENED IRHNA7460SE POWER MOSFET 500V, N-CHANNEL SURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNA7460SE 100K Rads (Si) 0.32 20A SMD-2 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a

 8.1. Size:178K  international rectifier
 irhna7360se.pdf pdf_icon

IRHNA7460SE

PD-91398B RADIATION HARDENED IRHNA7360SE POWER MOSFET 400V, N-CHANNEL SURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24A SMD-2 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology ha

 8.2. Size:119K  international rectifier
 irhna7264se.pdf pdf_icon

IRHNA7460SE

PD - 91432C RADIATION HARDENED IRHNA7264SE POWER MOSFET 250V, N-CHANNEL SURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34A SMD-2 International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology

 8.3. Size:121K  international rectifier
 irhna7z60.pdf pdf_icon

IRHNA7460SE

PD - 91708B RADIATION HARDENED IRHNA7Z60 POWER MOSFET 30V, N-CHANNEL SURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*A SMD-2 International Rectifier s RADHard HE

MOSTRAR MÁS

Otros transistores... IRHNA57260, IRHNA597160, IRHNA67160, IRHNA67164, IRHNA67260, IRHNA67264, IRHNA7264SE, IRHNA7360SE, SPP20N60C3, IRHNA7Z60, IRHNB7264SE, IRHNJ57234SE, IRHNJ67434, IRHNJ67C30, IRHNJ9230, IRHNM57214SE, IRHSLNA57064