IRHNA7460SE Todos los transistores

 

IRHNA7460SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHNA7460SE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 220 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: SMD-2
 

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IRHNA7460SE Datasheet (PDF)

 ..1. Size:127K  international rectifier
 irhna7460se.pdf pdf_icon

IRHNA7460SE

PD - 91399BRADIATION HARDENED IRHNA7460SEPOWER MOSFET 500V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7460SE 100K Rads (Si) 0.32 20ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a

 8.1. Size:178K  international rectifier
 irhna7360se.pdf pdf_icon

IRHNA7460SE

PD-91398BRADIATION HARDENED IRHNA7360SEPOWER MOSFET 400V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7360SE 100K Rads (Si) 0.20 24ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology ha

 8.2. Size:119K  international rectifier
 irhna7264se.pdf pdf_icon

IRHNA7460SE

PD - 91432CRADIATION HARDENED IRHNA7264SEPOWER MOSFET 250V, N-CHANNELSURFACE MOUNT (SMD-2) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHNA7264SE 100K Rads (Si) 0.11 34ASMD-2International Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

 8.3. Size:121K  international rectifier
 irhna7z60.pdf pdf_icon

IRHNA7460SE

PD - 91708BRADIATION HARDENEDIRHNA7Z60POWER MOSFET30V, N-CHANNELSURFACE MOUNT(SMD-2) RAD-Hard HEXFET TECHNOLOGYProduct SummaryPart Number Radiation Level RDS(on) ID IRHNA7Z60 100K Rads (Si) 0.009 75*A IRHNA3Z60 300K Rads (Si) 0.009 75*A IRHNA4Z60 600K Rads (Si) 0.009 75*A IRHNA8Z60 1000K Rads (Si) 0.009 75*ASMD-2International Rectifiers RADHard HE

MOSTRAR MÁS

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