IRF100S201 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF100S201

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 441 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 192 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 97 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO-263

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IRF100S201 datasheet

 ..1. Size:617K  international rectifier
 irf100b201 irf100s201.pdf pdf_icon

IRF100S201

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 ..2. Size:258K  inchange semiconductor
 irf100s201.pdf pdf_icon

IRF100S201

Isc N-Channel MOSFET Transistor IRF100S201 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 8.1. Size:529K  international rectifier
 irf100b202.pdf pdf_icon

IRF100S201

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 8.2. Size:245K  inchange semiconductor
 irf100b201.pdf pdf_icon

IRF100S201

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF100B201 IIRF100B201 FEATURES Static drain-source on-resistance RDS(on) 4.2m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MA

MOSTRAR MÁS

Otros transistores... IRHSLNA57Z60, IRHSNA57064, IRHSNA57Z60, IRF034, IRF044SMD, IRF054SMD, IRF100B201, IRF100B202, AO4407, IRF1010A, IRF1010ELPBF, IRF1010EPBF, IRF1010ESPBF, IRF1010EZLPBF, IRF1010EZPBF, IRF1010EZSPBF, IRF1010H