IRF100S201 Todos los transistores

 

IRF100S201 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF100S201
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 441 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 192 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 97 nS
   Cossⓘ - Capacitancia de salida: 660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

IRF100S201 Datasheet (PDF)

 ..1. Size:617K  international rectifier
irf100b201 irf100s201.pdf pdf_icon

IRF100S201

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 ..2. Size:258K  inchange semiconductor
irf100s201.pdf pdf_icon

IRF100S201

Isc N-Channel MOSFET Transistor IRF100S201FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 8.1. Size:529K  international rectifier
irf100b202.pdf pdf_icon

IRF100S201

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 8.2. Size:245K  inchange semiconductor
irf100b201.pdf pdf_icon

IRF100S201

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF100B201 IIRF100B201FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: S10H06R | IXFM13N80 | KP101E | PHD55N03LTA | 2SK1925 | BSC0501NSI | FQD10N20LTM

 

 
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