Справочник MOSFET. IRF100S201

 

IRF100S201 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF100S201
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 441 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 192 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 170 nC
   trⓘ - Время нарастания: 97 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IRF100S201

 

 

IRF100S201 Datasheet (PDF)

 ..1. Size:614K  international rectifier
 irf100b201 irf100s201.pdf

IRF100S201 IRF100S201

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 ..2. Size:617K  infineon
 irf100b201 irf100s201.pdf

IRF100S201 IRF100S201

StrongIRFET IRF100B201 IRF100S201 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 3.5m Synchronous rectifier applications G max 4.2m Resonant mode power supplies S OR-ing

 ..3. Size:258K  inchange semiconductor
 irf100s201.pdf

IRF100S201 IRF100S201

Isc N-Channel MOSFET Transistor IRF100S201FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 8.1. Size:529K  international rectifier
 irf100b202.pdf

IRF100S201 IRF100S201

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 8.2. Size:529K  infineon
 irf100b202.pdf

IRF100S201 IRF100S201

StrongIRFET IRF100B202 Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications D VDSS 100V Battery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 7.2m Synchronous rectifier applications G max 8.6m Resonant mode power supplies S OR-ing and redundan

 8.3. Size:245K  inchange semiconductor
 irf100b201.pdf

IRF100S201 IRF100S201

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF100B201 IIRF100B201FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

 8.4. Size:245K  inchange semiconductor
 irf100b202.pdf

IRF100S201 IRF100S201

isc N-Channel MOSFET Transistor IRF100B202IIRF100B202FEATURESStatic drain-source on-resistance:RDS(on) 8.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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