IRF1018EPBF Datasheet. Equivalente

 ..1. Size:429K  international rectifier
 irf1018epbf irf1018eslpbf irf1018espbf.pdf

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l

 ..2. Size:429K  international rectifier
 irf1018epbf irf1018espbf irf1018eslpbf.pdf

PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in D SMPS VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 8.4m ID 79A S Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D D l

 6.1. Size:658K  infineon
 auirf1018es.pdf

AUTOMOTIVE GRADE AUIRF1018ES HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. Ultra Low On-Resistance 7.1m 175 C Operating Temperature max. 8.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 79A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed fo

 6.2. Size:156K  infineon
 auirf1018e.pdf

International Rectifier Product Detail Page Page 1 of 2 Part Se AUIRF1018E Part Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package Description Support Docs N/A Commercial Datasheet Reliability Report Automotive Market IR serves the automotive market with a dedicated product portfolio, with high quality and automotive certified development, manufact

 6.3. Size:246K  inchange semiconductor
 irf1018e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1018E IIRF1018E FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 6.4. Size:258K  inchange semiconductor
 irf1018es.pdf

Isc N-Channel MOSFET Transistor IRF1018ES FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol