STL13N60M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STL13N60M2N-channel 600 V, 0.39 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL13N60M2 650 V 0.42 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation123 Low gate input resistance4 100% avalanche testedPowerFLAT 5x6

STL13N65M2N-channel 650 V, 0.365 typ., 6.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL13N65M2 650 V 0.475 6.5 A Extremely low gate charge Excellent output capacitance (COSS) profile 123 100% avalanche tested4 Zener-protectedPowerFLAT 5x6 HVApplications S

STL13NM60NN-channel 600 V, 0.320 typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS @ Tjmax RDS(on) max. IDS ) Bottom viewS(3)S(3) STL13NM60N 650 V 0.385 10 A G(1)D(2) 100% avalanche tested Low input capacitance and gate charge Low gate input resistancePowerFLAT 8x8 HVApplicatio

STL130N8F7N-channel 80 V, 3 m, 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max ID PTOT3.6 m STL130N8F7 80 V 130 A 135 W(VGS=10 V) Ultra low on-resistance123 100% avalanche tested4ApplicationsPowerFLAT 5x6 Switching applicationsDescriptionFigure 1. Internal schemati

STL13DP10F6Dual P-channel 100 V, 0.136 typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double islandDatasheet - production dataFeatures VDS RDS(on) max. ID1 Order code4 STL13DP10F6 100 V 0.18 3.3 A 1 RDS(on) * Qg industry benchmark84 Extremely low on-resistance RDS(on)5 High avalanche ruggednessPowerFLAT 5x6 Low gat

STL130N6F7 N-channel 60 V, 0.003 typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V R max I DS DS(on) DSTL130N6F7 60 V 0.0035 130 A Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications

2STL13602STX1360Low voltage fast-switching NPN power transistorsFeatures Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speedApplications Emergency lighting LEDTO-92 TO-92L Voltage regulation Relay driveFigure 1. Internal schematic diagramDescriptionThe devices are NPN transistors manufactured us