STL160NS3LLH7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STL160NS3LLH7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21.3 nS
   Cossⓘ - Capacitancia de salida: 970 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: POWERFLAT5X6

Búsqueda de reemplazo de MOSFET STL160NS3LLH7

STL160NS3LLH7 Datasheet (PDF)

..1. Size:1015K st
stl160ns3llh7.pdf

STL160NS3LLH7N-channel 30 V, 0.0016 typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6Datasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL160NS3LLH7 30 V 0.0021 160 A Very low on-resistance12 Very low Qg34 High avalanche ruggednessPowerFLAT5x6 Embedded Schottky diodeApplications Switchi

7.1. Size:795K st
stl160n3llh6.pdf

STL160N3LLH6N-channel 30 V, 0.0011 , 35 A PowerFLAT (5x6)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL160N3LLH6 30 V 0.0013 35 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness

9.1. Size:942K st
stl16n65m2.pdf

STL16N65M2N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDSTL16N65M2 710 V 0.395 7.5 A Extremely low gate charge1 Excellent output capacitance (Coss) profile 234 100% avalanche tested Zener-protectedPowerFLAT 5x6 HVApplications

9.2. Size:467K st
stl16n60m2.pdf

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 34 Zener-protected Applications PowerFL

9.3. Size:923K st
stl16n65m5.pdf

STL16N65M5N-channel 650 V, 0.270 , 12 A PowerFLAT 8x8 HVMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL16N65M5 710 V

9.4. Size:846K st
stl16n1vh5.pdf

STL16N1VH5N-channel 12 V, 0.0022 , 16 A, PowerFLAT (3.3 x 3.3)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL16N1VH5 12 V 0.003 16 A (1)1. The value is rated according Rthj-pcb Improved die-to-footprint ratio Very low profile package (1mm max)PowerFLAT(3.3x3.3) Very low thermal resistance Very low gate charge Very low o

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: