STL160NS3LLH7 datasheet, подбор замены

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 stl160ns3llh7.pdf 

STL160NS3LLH7 N-channel 30 V, 0.0016 typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Datasheet - production data Features Order code VDS RDS(on) max ID STL160NS3LLH7 30 V 0.0021 160 A Very low on-resistance 1 2 Very low Qg 3 4 High avalanche ruggedness PowerFLAT 5x6 Embedded Schottky diode Applications Switchi

 7.1. Size:795K  st
 stl160n3llh6.pdf 

STL160N3LLH6 N-channel 30 V, 0.0011 , 35 A PowerFLAT (5x6) STripFET VI DeepGATE Power MOSFET Features RDS(on) Order code VDSS ID max STL160N3LLH6 30 V 0.0013 35 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 5x6 ) Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness

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 stl16n65m2.pdf 

STL16N65M2 N-channel 650 V, 0.325 typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STL16N65M2 710 V 0.395 7.5 A Extremely low gate charge 1 Excellent output capacitance (Coss) profile 2 3 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV Applications

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 stl16n60m2.pdf 

STL16N60M2 N-channel 600 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) D STL16N60M2 650 V 0.355 8 A Extremely low gate charge 1 Excellent output capacitance (COSS) profile 2 100% avalanche tested 3 4 Zener-protected Applications PowerFL

 9.3. Size:923K  st
 stl16n65m5.pdf 

STL16N65M5 N-channel 650 V, 0.270 , 12 A PowerFLAT 8x8 HV MDmesh V Power MOSFET Features VDSS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL16N65M5 710 V

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 stl16n1vh5.pdf 

STL16N1VH5 N-channel 12 V, 0.0022 , 16 A, PowerFLAT (3.3 x 3.3) STripFET V Power MOSFET Features RDS(on) Order code VDSS ID max STL16N1VH5 12 V 0.003 16 A (1) 1. The value is rated according Rthj-pcb Improved die-to-footprint ratio Very low profile package (1mm max) PowerFLAT (3.3x3.3) Very low thermal resistance Very low gate charge Very low o