STW34N65M5 Todos los transistores

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS(on) max ID 2 3 1 3 2 1 STB34N65M5 D2PAK I2PAK STI34N65M5 710 V 0.11 28 A TAB STP34N65M5 STW34N65M5 Worldwide best RDS(on) * area 3 3 2

STB34N65M5, STF34N65M5, STFI34N65M5, STI34N65M5, STP34N65M5, STW34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFET in a D2PAK, TO-220FP, I2PAKFP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB VDSS @ RDS(on) Order codes ID 2 TJmax max 3 1 3 STB34N65M5 2 D2PAK 1 TO-220FP STF34N65M5 I2PAKFP STFI34N65M5 TAB TAB 710 V

STF34NM60N STP34NM60N, STW34NM60N N-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFET TO-220, TO-247, TO-220FP Preliminary data Features RDS(on) Type VDSS ID PTOT max. 3 3 2 2 STF34NM60N 600 V 0.105 29 A 40 W 1 1 STP34NM60N 600 V 0.105 29 A 210 W TO-247 TO-220 STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested 3 Low input capacitance and ga

STW34NM60N N-channel 600 V, 0.092 typ., 31.5 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDSS RDS(on) ID PTOT STW34NM60N 600 V 0.105 31.5 A 250 W 100% avalanche tested Low input capacitance and gate charge 3 Low gate input resistance 2 1 Applications TO-247 Switching applications Description Figure 1.

STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Datasheet production data Features TAB Order codes VDS @TJ max. RDS(on) max. ID 3 1 STB34NM60ND 3 2 1 D2PAK STF34NM60ND TO-220FP 650 V 0.110 29 A STP34NM60ND TAB STW34NM60ND The world s bes

STW34NB20 N-CHANNEL 200V - 0.062 - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STW34NB20 200 V