STW45N65M5 Todos los transistores

 ..1. Size:1268K  st
 stfw45n65m5 stw45n65m5 stwa45n65m5.pdf

STFW45N65M5, STW45N65M5, STWA45N65M5 N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STFW45N65M5 STW45N65M5 710 V 0.078 35 A 1 1 1 STWA45N65M5 3 3 2 2 1 1 Worldwide best RDS(on) * area TO-247 TO-3PF TO-247 long leads Hig

 ..2. Size:1336K  st
 stb45n65m5 stf45n65m5 stp45n65m5 stw45n65m5.pdf

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB 2 VDSS @ RDS(on) 3 Order code ID 1 TJmax max 3 2 D2PAK 1 STB45N65M5 TO-220FP TAB STF45N65M5 710 V

 7.1. Size:386K  st
 stw45n60dm2ag.pdf

STW45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ R DS DS(on) Order code I P D TOT TJmax. max. 34 250 STW45N60DM2AG 650 V 0.093 A W 3 Designed for automotive applications and 2 AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate c

 7.2. Size:817K  st
 stp45n60dm6 stw45n60dm6.pdf

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP45N60DM6 600 V 0.099 30 A STW45N60DM6 3 3 Fast-recovery body diode 2 2 1 Lower R x area vs previous generation DS(on) 1 Low gate charge, input capacitan

 8.1. Size:585K  st
 stw45nm50.pdf

STW45NM50 N-channel 550 V @ TJmax, 0.08 , 45 A, TO-247 MDmesh Power MOSFET Features RDS(on) Type VDSS ID max STW45NM50FD 500 V

 8.2. Size:325K  st
 stw45nm60.pdf

STW45NM60 N-channel 650V@Tjmax - 0.09 - 45A - TO-247 MDmesh Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STW45NM60 650V

 8.3. Size:581K  st
 stw45nm50fd.pdf

STW45NM50FD N-channel 500 V, 0.07 , 45 A, TO-247 FDmesh Power MOSFET (with fast diode) Features RDS(on) Type VDSS ID max STW45NM50FD 500 V

 8.4. Size:212K  inchange semiconductor
 stw45nm50.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW45NM50 FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniat

 8.5. Size:200K  inchange semiconductor
 stw45nm60.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW45NM60 FEATURES High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application