STW45N65M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STFW45N65M5, STW45N65M5, STWA45N65M5N-channel 650 V, 35 A, 0.067 typ., MDmesh V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packagesDatasheet - production dataFeatures Order codes VDS @ TJmax RDS(on) max IDSTFW45N65M5STW45N65M5 710 V 0.078 35 A111STWA45N65M5332 21 1 Worldwide best RDS(on) * areaTO-247TO-3PFTO-247 long leads Hig

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

STW45N60DM2AG Automotive-grade N-channel 600 V, 0.085 typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTTJmax. max. 34 250 STW45N60DM2AG 650 V 0.093 A W 3 Designed for automotive applications and 2AEC-Q101 qualified 1 Fast-recovery body diode Extremely low gate c

STP45N60DM6, STW45N60DM6 N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP45N60DM6 600 V 0.099 30 A STW45N60DM6 33 Fast-recovery body diode 221 Lower R x area vs previous generation DS(on)1 Low gate charge, input capacitan

STW45NM50N-channel 550 V @ TJmax, 0.08 , 45 A, TO-247MDmesh Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTW45NM50FD 500 V

STW45NM60N-channel 650V@Tjmax - 0.09 - 45A - TO-247MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STW45NM60 650V

STW45NM50FDN-channel 500 V, 0.07 , 45 A, TO-247FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS IDmaxSTW45NM50FD 500 V

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW45NM50FEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe MDmesh family is very suitable for increasingpower density of high voltage converters allowing systemminiat

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW45NM60FEATURESHigh dv/dt and avalanche capabilitiesLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching application