MCH6412 Todos los transistores

 ..1. Size:34K  sanyo
 mch6412.pdf

Ordering number ENA0448 MCH6412 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6412 Applications Features Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 5 A

 9.1. Size:347K  1
 mch6448.pdf

MCH6448 Ordering number ENA2004 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET Low-Voltage Driver Switching MCH6448 Device Applications Features ON-resistance RDS(on)1=17m (typ.) 1.2V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Volt

 9.2. Size:27K  sanyo
 mch6402.pdf

Ordering number ENN6972 MCH6402 N-Channel Silicon MOSFET MCH6402 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193A 4V drive. [MCH6402] 0.3 0.15 4 5 6 3 2 1 0.65 1 Drain 2 Drain 2.0 6 5 4 3 Gate 4 Source 5 Drain 6 Drain Specifications 1 2 3 SANYO MCPH6

 9.3. Size:49K  sanyo
 mch6429.pdf

Ordering number ENA0688 MCH6429 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6429 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 1

 9.4. Size:496K  sanyo
 mch6436.pdf

MCH6436 Ordering number ENA1565A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6436 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

 9.5. Size:27K  sanyo
 mch6401.pdf

Ordering number ENN6779 MCH6401 N-Channel Silicon MOSFET MCH6401 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6401] 0.3 0.15 6 5 4 1 2 3 0.65 1 Drain 2.0 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Specifications SANYO MCPH6 Absolute Maximum Ratings at

 9.6. Size:27K  sanyo
 mch6403.pdf

Ordering number ENN6780 MCH6403 N-Channel Silicon MOSFET MCH6403 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6403] 0.3 0.15 6 5 4 1 2 3 0.65 1 Drain 2.0 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Specifications Absolute Maximum Ratings at Ta=25 C SANY

 9.7. Size:362K  sanyo
 mch6431.pdf

MCH6431 Ordering number ENA1852 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6431 Applications Features ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sour

 9.8. Size:27K  sanyo
 mch6405.pdf

Ordering number ENN7012 MCH6405 N-Channel Silicon MOSFET MCH6405 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193A 2.5V drive. [MCH6405] 0.3 0.15 4 5 6 3 2 1 1 Drain 0.65 2 Drain 3 Gate 2.0 6 5 4 4 Source 5 Drain 6 Drain SANYO MCPH6 Specifications 1 2 3 Absolute Ma

 9.9. Size:346K  sanyo
 mch6437.pdf

MCH6437 Ordering number ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6437 Applications Features ON-resistance RDS(on)1=18m (typ.) 1.8V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drai

 9.10. Size:342K  sanyo
 mch6444.pdf

MCH6444 Ordering number EN8935 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6444 Applications Features ON-resistance RDS(on)1=75m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source

 9.11. Size:64K  sanyo
 mch6421.pdf

Ordering number ENA1264 MCH6421 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6421 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12

 9.12. Size:496K  sanyo
 mch6445.pdf

MCH6445 Ordering number ENA1566 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6445 Applications Features 4V drive. Low ON-resistance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4 A

 9.13. Size:624K  onsemi
 mch6448.pdf

MCH6448 Power MOSFET www.onsemi.com 20V, 22m , 8A, Single N-Channel VDSS RDS(on) Max ID Max Features 22m @ 4.5V Low On-Resistance 28m @ 2.5V 20V 8A 1.2V Drive 39m @ 1.8V ESD Diode-Protected Gate 124m @ 1.2V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C

 9.14. Size:392K  onsemi
 mch6436.pdf

MCH6436 Power MOSFET www.onsemi.com 30V, 34m , 6A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 34m @ 4.5V 1.8V Drive 30V 49m @ 2.5V 6A High Speed Switching 69m @ 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25 C 1, 2, 5, 6

 9.15. Size:389K  onsemi
 mch6437.pdf

MCH6437 Power MOSFET www.onsemi.com 20V, 24m , 7A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 24m @ 4.5V 1.8V Drive 20V 35m @ 2.5V 7A ESD Diode-Protected Gate 65m @ 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Symbol Value 1, 2,

 9.16. Size:625K  onsemi
 mch6421.pdf

MCH6421 Power MOSFET 20V, 38m , 5.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max

 9.17. Size:1023K  onsemi
 mch6445.pdf

Ordering number ENA1566B MCH6445 N-Channel Power MOSFET http //onsemi.com 60V, 4A, 78m , Single MCPH6 Features 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4 A Drain Current (Pu

 9.18. Size:1368K  kexin
 mch6405.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET MCH6405 (KCH6405) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID = 5.0 A RDS(ON) 41m (VGS = 4V) RDS(ON) 54m (VGS = 2.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Absolute Maximum Ratings Ta = 25 Pa