MCH6412 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MCH6412
Маркировка: KL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Минимальное напряжение отсечки |Vgs(off)|: 0.4 V
Максимально допустимый постоянный ток стока |Id|: 5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 7 nC
Время нарастания (tr): 78 ns
Выходная емкость (Cd): 125 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.041 Ohm
Тип корпуса: SOT-363 MCPH6 SC88
MCH6412 Datasheet (PDF)
mch6412.pdf
Ordering number : ENA0448 MCH6412SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6412ApplicationsFeatures Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 5 A
mch6448.pdf
MCH6448Ordering number : ENA2004SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETLow-Voltage Driver SwitchingMCH6448Device ApplicationsFeatures ON-resistance RDS(on)1=17m (typ.) 1.2V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Volt
mch6402.pdf
Ordering number : ENN6972MCH6402N-Channel Silicon MOSFETMCH6402Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193A 4V drive.[MCH6402]0.30.154 5 63 2 10.651 : Drain2 : Drain2.06 5 43 : Gate4 : Source5 : Drain6 : DrainSpecifications1 2 3 SANYO : MCPH6
mch6429.pdf
Ordering number : ENA0688 MCH6429SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6429ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 1
mch6436.pdf
MCH6436Ordering number : ENA1565ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6436ApplicationsFeatures Low ON-resistance. Ultrahigh speed switching. 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS
mch6401.pdf
Ordering number : ENN6779MCH6401N-Channel Silicon MOSFETMCH6401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193 2.5V drive.[MCH6401]0.3 0.156 5 41 2 30.651 : Drain2.0 2 : Drain3 : Gate4 : Source5 : Drain6 : DrainSpecificationsSANYO : MCPH6Absolute Maximum Ratings at
mch6403.pdf
Ordering number : ENN6780MCH6403N-Channel Silicon MOSFETMCH6403Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193 2.5V drive.[MCH6403]0.3 0.156 5 41 2 30.651 : Drain2.02 : Drain3 : Gate4 : Source5 : Drain6 : DrainSpecificationsAbsolute Maximum Ratings at Ta=25C SANY
mch6431.pdf
MCH6431Ordering number : ENA1852SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6431ApplicationsFeatures ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour
mch6405.pdf
Ordering number : ENN7012MCH6405N-Channel Silicon MOSFETMCH6405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193A 2.5V drive.[MCH6405]0.30.154 5 63 2 11 : Drain0.65 2 : Drain3 : Gate2.06 5 44 : Source5 : Drain6 : DrainSANYO : MCPH6Specifications1 2 3Absolute Ma
mch6437.pdf
MCH6437Ordering number : ENA1776SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6437ApplicationsFeatures ON-resistance RDS(on)1=18m (typ.) 1.8V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrai
mch6444.pdf
MCH6444Ordering number : EN8935SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6444ApplicationsFeatures ON-resistance RDS(on)1=75m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source
mch6421.pdf
Ordering number : ENA1264 MCH6421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETMCH6421 General-Purpose Switching DeviceApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12
mch6445.pdf
MCH6445Ordering number : ENA1566SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6445ApplicationsFeatures 4V drive. Low ON-resistance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4 A
mch6448.pdf
MCH6448 Power MOSFET www.onsemi.com 20V, 22m, 8A, Single N-Channel VDSS RDS(on) Max ID MaxFeatures 22m@ 4.5V Low On-Resistance 28m@ 2.5V 20V 8A 1.2V Drive 39m@ 1.8V ESD Diode-Protected Gate 124m@ 1.2V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C
mch6436.pdf
MCH6436 Power MOSFET www.onsemi.com 30V, 34m, 6A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 34m@ 4.5V 1.8V Drive 30V 49m@ 2.5V 6A High Speed Switching 69m@ 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25C 1, 2, 5, 6
mch6437.pdf
MCH6437 Power MOSFET www.onsemi.com 20V, 24m, 7A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 24m@ 4.5V 1.8V Drive 20V 35m@ 2.5V 7A ESD Diode-Protected Gate 65m@ 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol Value1, 2,
mch6421.pdf
MCH6421 Power MOSFET 20V, 38m, 5.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max
mch6445.pdf
Ordering number : ENA1566BMCH6445N-Channel Power MOSFEThttp://onsemi.com60V, 4A, 78m , Single MCPH6Features 4V drive Low ON-resistance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4 ADrain Current (Pu
mch6405.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETMCH6405 (KCH6405)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID = 5.0 A RDS(ON) 41m (VGS = 4V) RDS(ON) 54m (VGS = 2.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.11 : Drain2 : Drain3 : Gate4 : Source5 : Drain6 : Drain Absolute Maximum Ratings Ta = 25Pa
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