MCH6660 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCH6660Power MOSFETwww.onsemi.com 20V, 136m , 2A, 20V, 266m , 1.5A Complementary DualFeatures ON-resistance Nch : RDS(on)1=105m (typ.) 1.8V Drive ESD Diode - Protected Gate Pch : RDS(on)1=205m (typ.) Pb-Free, Halogen Free and RoHS Compliance Ultrasmall Package MCPH6(2.0mm 2.1mm mmt) 0.85 Nch MOSFET and Pch MOSFET are p

MCH6663 Power MOSFET www.onsemi.com 30V, 188m, 1.8A, -30V, 325m, -1.5A,Complementary Dual Features VDSS RDS(on) Max ID Max ON-Resistance Nch : RDS(on)1=145m (typ) 188 m@ 10V N-Ch Pch : RDS(on)1=250m (typ) 343 m@ 4.5V 1.8A 30V 4V Drive 378 m@ 4V Complementary N-Channel and P-Channel MOSFET 325 m@ -10V P-Ch Pb-Free, Halogen Fre

Ordering number : ENA2281AMCH6664P-Channel Power MOSFEThttp://onsemi.com 30V, 1.5A, 325m , Dual MCPH6Features ON-resistance Pch : RDS(on)1=250m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain to Source Voltage VDSS --30 VGate to Source Voltage VGSS 20 V

MCH6662Power MOSFETwww.onsemi.com20V, 160m , 2A, Dual N-ChannelFeatures ON-Resistance Nch : RDS(on)1=120m (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS ComplianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 V

Ordering number : ENA2280AMCH6661N-Channel Power MOSFEThttp://onsemi.com30V, 1.8A, 188m , Dual MCPH6Features ON-resistance Nch : RDS(on)1=145m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 30 VGate to Source Voltage VGSS 20 VDrain Cur