MCH6660
MOSFET. Datasheet pdf. Equivalent
Type Designator: MCH6660
Marking Code: XM
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.8
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 28
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.136
Ohm
Package:
SOT-363
MCPH6
SC88
MCH6660
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCH6660
Datasheet (PDF)
..1. Size:1002K onsemi
mch6660.pdf
MCH6660Power MOSFETwww.onsemi.com 20V, 136m , 2A, 20V, 266m , 1.5A Complementary DualFeatures ON-resistance Nch : RDS(on)1=105m (typ.) 1.8V Drive ESD Diode - Protected Gate Pch : RDS(on)1=205m (typ.) Pb-Free, Halogen Free and RoHS Compliance Ultrasmall Package MCPH6(2.0mm 2.1mm mmt) 0.85 Nch MOSFET and Pch MOSFET are p
8.1. Size:644K onsemi
mch6663.pdf
MCH6663 Power MOSFET www.onsemi.com 30V, 188m, 1.8A, -30V, 325m, -1.5A,Complementary Dual Features VDSS RDS(on) Max ID Max ON-Resistance Nch : RDS(on)1=145m (typ) 188 m@ 10V N-Ch Pch : RDS(on)1=250m (typ) 343 m@ 4.5V 1.8A 30V 4V Drive 378 m@ 4V Complementary N-Channel and P-Channel MOSFET 325 m@ -10V P-Ch Pb-Free, Halogen Fre
8.2. Size:854K onsemi
mch6664.pdf
Ordering number : ENA2281AMCH6664P-Channel Power MOSFEThttp://onsemi.com 30V, 1.5A, 325m , Dual MCPH6Features ON-resistance Pch : RDS(on)1=250m (typ.) 4V drive Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain to Source Voltage VDSS --30 VGate to Source Voltage VGSS 20 V
8.3. Size:578K onsemi
mch6662.pdf
MCH6662Power MOSFETwww.onsemi.com20V, 160m , 2A, Dual N-ChannelFeatures ON-Resistance Nch : RDS(on)1=120m (typ) 1.8V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS ComplianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Value UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 V
8.4. Size:840K onsemi
mch6661.pdf
Ordering number : ENA2280AMCH6661N-Channel Power MOSFEThttp://onsemi.com30V, 1.8A, 188m , Dual MCPH6Features ON-resistance Nch : RDS(on)1=145m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 30 VGate to Source Voltage VGSS 20 VDrain Cur
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