MCP87030 Todos los transistores

 

MCP87030 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MCP87030
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 730 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: PDFN5X6
 

 Búsqueda de reemplazo de MCP87030 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MCP87030 Datasheet (PDF)

 ..1. Size:606K  microchip
mcp87030.pdf pdf_icon

MCP87030

MCP87030High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga

 8.1. Size:616K  microchip
mcp87055.pdf pdf_icon

MCP87030

MCP87055High-Speed N-Channel Power MOSFETFeatures Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel powerMOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processingCharge (QGD)technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista

 8.2. Size:942K  microchip
mcp87090.pdf pdf_icon

MCP87030

MCP87090High-Speed N-Channel Power MOSFETFeatures:Description: Low Drain-to-Source On Resistance (RDS(ON))The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as aCharge (QGD)PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG)packaging and silicon processing technol

 8.3. Size:668K  microchip
mcp87050.pdf pdf_icon

MCP87030

MCP87050High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allowCharge (QGD)the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga

Otros transistores... MCH6661 , MCH6662 , MCH6663 , MCH6664 , MCP04N60 , MCP04N65 , MCP87018 , MCP87022 , RU7088R , MCP87050 , MCP87055 , MCP87090 , MCP87130 , MCPF04N60 , MCPF04N65 , MCPF05N60B , MCPF08N60 .

History: AM5853

 

 
Back to Top

 


History: AM5853

MCP87030
  MCP87030
  MCP87030
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: FTP06N06N | MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50

 

 

 
Back to Top

 

Popular searches

tip36c transistor | 2sc3320 | 2sc2078 | ac127 transistor | a42 transistor | bc547c | 2sa726 | 2sd313

 


 
.