MCP87030 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MCP87030
Маркировка: 87030
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.6 V
Максимально допустимый постоянный ток стока |Id|: 50 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17 nC
Время нарастания (tr): 17 ns
Выходная емкость (Cd): 730 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
Тип корпуса: PDFN5X6
MCP87030 Datasheet (PDF)
mcp87030.pdf
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MCP87030High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga
mcp87055.pdf
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MCP87055High-Speed N-Channel Power MOSFETFeatures Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel powerMOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processingCharge (QGD)technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista
mcp87090.pdf
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MCP87090High-Speed N-Channel Power MOSFETFeatures:Description: Low Drain-to-Source On Resistance (RDS(ON))The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as aCharge (QGD)PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG)packaging and silicon processing technol
mcp87050.pdf
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MCP87050High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allowCharge (QGD)the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga
mcp87022.pdf
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MCP87022High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87022 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87022 to achieve a low QG for a given RDS(on) Low Series Gat
mcp87018.pdf
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MCP87018High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87018 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87018 to achieve a low QG for a given RDS(on) Low Series Ga
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
![MCP87030](https://alltransistors.com/images/us.png)
![MCP87030](https://alltransistors.com/images/es.png)
![MCP87030](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: MPVD5N50CCFD | MPVU5N50CCFD | MPVA7N65F | MPVD4N70F | MPVU4N70F | MPVA4N70F | MPVD4N65F | MPVU4N65F | MPVA4N65F | MPVD2N65BK | MPVU2N65BK | MPVA2N65BK | MPVP20N65F | MPVA20N65F | MPVA20N50F | MPVT20N50B