Справочник MOSFET. MCP87030

 

MCP87030 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MCP87030
   Маркировка: 87030
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.6 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 17 nC
   Время нарастания (tr): 17 ns
   Выходная емкость (Cd): 730 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для MCP87030

 

 

MCP87030 Datasheet (PDF)

 ..1. Size:606K  microchip
 mcp87030.pdf

MCP87030 MCP87030

MCP87030High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga

 8.1. Size:616K  microchip
 mcp87055.pdf

MCP87030 MCP87030

MCP87055High-Speed N-Channel Power MOSFETFeatures Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel powerMOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processingCharge (QGD)technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista

 8.2. Size:942K  microchip
 mcp87090.pdf

MCP87030 MCP87030

MCP87090High-Speed N-Channel Power MOSFETFeatures:Description: Low Drain-to-Source On Resistance (RDS(ON))The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as aCharge (QGD)PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG)packaging and silicon processing technol

 8.3. Size:668K  microchip
 mcp87050.pdf

MCP87030 MCP87030

MCP87050High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allowCharge (QGD)the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga

 8.4. Size:618K  microchip
 mcp87022.pdf

MCP87030 MCP87030

MCP87022High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87022 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87022 to achieve a low QG for a given RDS(on) Low Series Gat

 8.5. Size:647K  microchip
 mcp87018.pdf

MCP87030 MCP87030

MCP87018High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87018 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87018 to achieve a low QG for a given RDS(on) Low Series Ga

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