MCP87030 - Аналоги. Основные параметры
Наименование производителя: MCP87030
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 730 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: PDFN5X6
Аналог (замена) для MCP87030
MCP87030 технические параметры
mcp87030.pdf
MCP87030 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allow the MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga
mcp87055.pdf
MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processing Charge (QGD) technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista
mcp87090.pdf
MCP87090 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technol
mcp87050.pdf
MCP87050 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allow Charge (QGD) the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga
Другие MOSFET... MCH6661 , MCH6662 , MCH6663 , MCH6664 , MCP04N60 , MCP04N65 , MCP87018 , MCP87022 , IRFZ48N , MCP87050 , MCP87055 , MCP87090 , MCP87130 , MCPF04N60 , MCPF04N65 , MCPF05N60B , MCPF08N60 .
Список транзисторов
Обновления
MOSFET: AP40P05 | AP40P04Q | AP40P04K | AP40P04G | AP40N100LK | AP40N100K | AP40N06K | AP4013S | AP4008SD | AP4688S | AP4606 | AP4580 | AP4435C | AP4410 | AP4409S | AP4407C
Popular searches
tip36c transistor | 2sc3320 | 2sc2078 | ac127 transistor | a42 transistor | bc547c | 2sa726 | 2sd313







