MCP87050 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MCP87050

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: PDFN5X6

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MCP87050 datasheet

 ..1. Size:668K  microchip
 mcp87050.pdf pdf_icon

MCP87050

MCP87050 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allow Charge (QGD) the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga

 7.1. Size:616K  microchip
 mcp87055.pdf pdf_icon

MCP87050

MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processing Charge (QGD) technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista

 8.1. Size:942K  microchip
 mcp87090.pdf pdf_icon

MCP87050

MCP87090 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technol

 8.2. Size:606K  microchip
 mcp87030.pdf pdf_icon

MCP87050

MCP87030 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allow the MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga

MOSTRAR MÁS

Otros transistores... MCH6662, MCH6663, MCH6664, MCP04N60, MCP04N65, MCP87018, MCP87022, MCP87030, IRFZ46N, MCP87055, MCP87090, MCP87130, MCPF04N60, MCPF04N65, MCPF05N60B, MCPF08N60, MCQ4822