MCP87050 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MCP87050
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 490 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: PDFN5X6
Аналог (замена) для MCP87050
MCP87050 Datasheet (PDF)
mcp87050.pdf

MCP87050High-Speed N-Channel Power MOSFETFeatures: Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allowCharge (QGD)the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga
mcp87055.pdf

MCP87055High-Speed N-Channel Power MOSFETFeatures Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel powerMOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processingCharge (QGD)technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista
mcp87090.pdf

MCP87090High-Speed N-Channel Power MOSFETFeatures:Description: Low Drain-to-Source On Resistance (RDS(ON))The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as aCharge (QGD)PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG)packaging and silicon processing technol
mcp87030.pdf

MCP87030High-Speed N-Channel Power MOSFETFeatures: Description: Low Drain-to-Source On Resistance (RDS(ON)) The MCP87030 is an N-Channel power MOSFET in apopular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allowthe MCP87030 to achieve a low QG for a given RDS(on) Low Series Ga
Другие MOSFET... MCH6662 , MCH6663 , MCH6664 , MCP04N60 , MCP04N65 , MCP87018 , MCP87022 , MCP87030 , STP65NF06 , MCP87055 , MCP87090 , MCP87130 , MCPF04N60 , MCPF04N65 , MCPF05N60B , MCPF08N60 , MCQ4822 .
History: 12N70KL-TA3-T | 14N50L-TF3-T | PP4B10BD | SIHFIBC20G | 2SK3597-01 | IXTP4N65X2 | 2SK3728-01MR
History: 12N70KL-TA3-T | 14N50L-TF3-T | PP4B10BD | SIHFIBC20G | 2SK3597-01 | IXTP4N65X2 | 2SK3728-01MR



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