SPC4516B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPC4516B

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 158 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: SOP-8P

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SPC4516B datasheet

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SPC4516B

SPC4516B N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4516B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st

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 spc4516.pdf pdf_icon

SPC4516B

SPC4516 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4516 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 9.1. Size:294K  syncpower
 spc4527.pdf pdf_icon

SPC4516B

SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4527 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 9.2. Size:288K  syncpower
 spc4567.pdf pdf_icon

SPC4516B

SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

MOSTRAR MÁS

Otros transistores... SP8M70, SP8M8FRA, SPB100N03S2, SPB42N03S2L-13, SPB80N03S2, SPC1016, SPC1018, SPC4516, IRF3710, SPC4527, SPC4533, SPC4533W, SPC4539, SPC4539B, SPC4567, SPC4567W, SPC5604