All MOSFET. SPC4516B Datasheet

 

SPC4516B Datasheet and Replacement


   Type Designator: SPC4516B
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP-8P
 

 SPC4516B substitution

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SPC4516B Datasheet (PDF)

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SPC4516B

SPC4516BN & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4516B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st

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SPC4516B

SPC4516 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4516 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 9.1. Size:294K  syncpower
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SPC4516B

SPC4527 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4527 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 9.2. Size:288K  syncpower
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SPC4516B

SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4567 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

Datasheet: SP8M70 , SP8M8FRA , SPB100N03S2 , SPB42N03S2L-13 , SPB80N03S2 , SPC1016 , SPC1018 , SPC4516 , P55NF06 , SPC4527 , SPC4533 , SPC4533W , SPC4539 , SPC4539B , SPC4567 , SPC4567W , SPC5604 .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - SPC4516B MOSFET datasheet

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