SPC4539 Todos los transistores

 

SPC4539 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPC4539
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
   Paquete / Cubierta: SOP-8P
 

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SPC4539 Datasheet (PDF)

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SPC4539

SPC4539 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

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 spc4539b.pdf pdf_icon

SPC4539

SPC4539BN & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st

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 spc4533.pdf pdf_icon

SPC4539

SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.2. Size:364K  syncpower
 spc4533w.pdf pdf_icon

SPC4539

SPC4533WN & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density, DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

MOSTRAR MÁS

Otros transistores... SPB80N03S2 , SPC1016 , SPC1018 , SPC4516 , SPC4516B , SPC4527 , SPC4533 , SPC4533W , IRF9540 , SPC4539B , SPC4567 , SPC4567W , SPC5604 , SPC6332 , SPC6601 , SPC6602 , SPC6604 .

History: BSO200P03S | NP82N055NHE | TT8K11 | 2SK2596

 

 
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