SPC4539 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SPC4539
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm
Тип корпуса: SOP-8P
Аналог (замена) для SPC4539
SPC4539 Datasheet (PDF)
spc4539.pdf

SPC4539 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4539b.pdf

SPC4539BN & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st
spc4533.pdf

SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
spc4533w.pdf

SPC4533WN & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density, DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
Другие MOSFET... SPB80N03S2 , SPC1016 , SPC1018 , SPC4516 , SPC4516B , SPC4527 , SPC4533 , SPC4533W , IRFP250N , SPC4539B , SPC4567 , SPC4567W , SPC5604 , SPC6332 , SPC6601 , SPC6602 , SPC6604 .
History: P261ALV | AO4404B



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