SPC4539. Аналоги и основные параметры

Наименование производителя: SPC4539

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.034 Ohm

Тип корпуса: SOP-8P

Аналог (замена) для SPC4539

- подборⓘ MOSFET транзистора по параметрам

 

SPC4539 даташит

 ..1. Size:272K  syncpower
 spc4539.pdf pdf_icon

SPC4539

SPC4539 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 0.1. Size:248K  syncpower
 spc4539b.pdf pdf_icon

SPC4539

SPC4539B N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4539B is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-st

 8.1. Size:247K  syncpower
 spc4533.pdf pdf_icon

SPC4539

SPC4533 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

 8.2. Size:364K  syncpower
 spc4533w.pdf pdf_icon

SPC4539

SPC4533W N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC4533W is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density, DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SPB80N03S2, SPC1016, SPC1018, SPC4516, SPC4516B, SPC4527, SPC4533, SPC4533W, 2N7000, SPC4539B, SPC4567, SPC4567W, SPC5604, SPC6332, SPC6601, SPC6602, SPC6604