SPD50N03S2L-06T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPD50N03S2L-06T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 740 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: PG-TO252-3-11

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SPD50N03S2L-06T datasheet

 ..1. Size:1183K  infineon
 spd50n03s2l-06.pdf pdf_icon

SPD50N03S2L-06T

SPD50N03S2L-06 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 6.4 m Logic Level ID 50 A P - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

 ..2. Size:272K  infineon
 spd50n03s2l-06 spd50n03s2l-06t.pdf pdf_icon

SPD50N03S2L-06T

SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 6.4 m Enhancement mode ID 50 A Logic Level PG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SP

 4.1. Size:1181K  infineon
 spd50n03s2-07 .pdf pdf_icon

SPD50N03S2L-06T

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 7.3 m Enhancement mode ID 50 A Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307

 4.2. Size:1179K  infineon
 spd50n03s2-07.pdf pdf_icon

SPD50N03S2L-06T

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 7.3 m Enhancement mode ID 50 A Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307

MOSTRAR MÁS

Otros transistores... SPC6332, SPC6601, SPC6602, SPC6604, SPC6605, SPD30N03S2L-10, SPD50N03S2-07, SPD50N03S2L-06, IRLB4132, SPI80N06S-80, SPM1007, SPM1008, SPMT16040F, SPMT9200F, SPN05T10, SPN09T10, SPN1012