All MOSFET. SPD50N03S2L-06T Datasheet

 

SPD50N03S2L-06T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPD50N03S2L-06T
   Marking Code: PN03L06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: PG-TO252-3-11

 SPD50N03S2L-06T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD50N03S2L-06T Datasheet (PDF)

 ..1. Size:1183K  infineon
 spd50n03s2l-06.pdf

SPD50N03S2L-06T SPD50N03S2L-06T

SPD50N03S2L-06 OptiMOS Power-TransistorFeatureProduct Summary N-ChannelVDS30 V Enhancement modeRDS(on) 6.4 m Logic LevelID 50 AP - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

 ..2. Size:272K  infineon
 spd50n03s2l-06 spd50n03s2l-06t.pdf

SPD50N03S2L-06T SPD50N03S2L-06T

SPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 6.4 m Enhancement modeID 50 A Logic LevelPG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSP

 4.1. Size:1181K  infineon
 spd50n03s2-07 .pdf

SPD50N03S2L-06T SPD50N03S2L-06T

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

 4.2. Size:1179K  infineon
 spd50n03s2-07.pdf

SPD50N03S2L-06T SPD50N03S2L-06T

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

 4.3. Size:243K  inchange semiconductor
 spd50n03s2.pdf

SPD50N03S2L-06T SPD50N03S2L-06T

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2FEATURESStatic drain-source on-resistance:RDS(on)7.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 3

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SVF2N60RDTR

 

 
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