SPP80N06S-08 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP80N06S-08

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 1075 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0077 Ohm

Encapsulados: PG-TO220-3-1

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SPP80N06S-08 datasheet

 ..1. Size:208K  1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPP80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 ..2. Size:205K  infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon

SPP80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 ..3. Size:221K  infineon
spi80n06s-80 spp80n06s-08.pdf pdf_icon

SPP80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 5.1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPP80N06S-08

www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.8 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05

Otros transistores... SPP15P10PH, SPP15P10PL, SPP18P06PG, SPP20N05L, SPP22N05, SPP77N05, SPP80N05, SPP80N05L, 2SK3568, SPP80P06P, SPP80P06PG, SPR80N03, SPU07N20G, SPW55N80C3, SQ1420EEH, SQ1421EEH, SQ1431EH