Справочник MOSFET. SPP80N06S-08

 

SPP80N06S-08 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SPP80N06S-08
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 53 ns
   Cossⓘ - Выходная емкость: 1075 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0077 Ohm
   Тип корпуса: PG-TO220-3-1
 

 Аналог (замена) для SPP80N06S-08

   - подбор ⓘ MOSFET транзистора по параметрам

 

SPP80N06S-08 Datasheet (PDF)

 ..1. Size:208K  1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdfpdf_icon

SPP80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 ..2. Size:205K  infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdfpdf_icon

SPP80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 ..3. Size:221K  infineon
spi80n06s-80 spp80n06s-08.pdfpdf_icon

SPP80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 5.1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdfpdf_icon

SPP80N06S-08

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

Другие MOSFET... SPP15P10PH , SPP15P10PL , SPP18P06PG , SPP20N05L , SPP22N05 , SPP77N05 , SPP80N05 , SPP80N05L , 5N65 , SPP80P06P , SPP80P06PG , SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH .

History: GP1M007A090XX | AOD280A60 | CSD17573Q5B | SPD07N60C3 | LNC7N65D | LSG65R380GT | HY050N08P

 

 
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