SPP80P06P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP80P06P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 340 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 1252 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: PG-TO220-3

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SPP80P06P datasheet

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf pdf_icon

SPP80P06P

SPP80P06P H SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating temperature

 ..2. Size:242K  inchange semiconductor
 spp80p06p.pdf pdf_icon

SPP80P06P

isc P-Channel MOSFET Transistor SPP80P06P ISPP80P06P FEATURES Static drain-source on-resistance RDS(on) 0.023 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION 175 operating temperature Avalanche rated dv/dt rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 0.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf pdf_icon

SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Continuous drain current ID -80 A dv/dt rated 175 C operating temperature Pin 1 PIN 2/4 PIN 3 Type Package Lead free G D S SPP80P06P G PG-TO220-3 Yes PG-TO263-3 SPB80P06P G

 0.2. Size:515K  infineon
 spp80p06pg.pdf pdf_icon

SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating

MOSTRAR MÁS

Otros transistores... SPP15P10PL, SPP18P06PG, SPP20N05L, SPP22N05, SPP77N05, SPP80N05, SPP80N05L, SPP80N06S-08, 10N65, SPP80P06PG, SPR80N03, SPU07N20G, SPW55N80C3, SQ1420EEH, SQ1421EEH, SQ1431EH, SQ1470AEH