SPP80P06P Todos los transistores

 

SPP80P06P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP80P06P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1252 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: PG-TO220-3
 

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SPP80P06P Datasheet (PDF)

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf pdf_icon

SPP80P06P

SPP80P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating temperature

 ..2. Size:242K  inchange semiconductor
 spp80p06p.pdf pdf_icon

SPP80P06P

isc P-Channel MOSFET Transistor SPP80P06PISPP80P06PFEATURESStatic drain-source on-resistance:RDS(on)0.023Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION175 operating temperatureAvalanche rateddv/dt ratedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 0.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf pdf_icon

SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche ratedContinuous drain current ID -80 A dv/dt rated 175C operating temperaturePin 1 PIN 2/4 PIN 3Type Package Lead freeG D SSPP80P06P G PG-TO220-3 Yes PG-TO263-3SPB80P06P G

 0.2. Size:515K  infineon
 spp80p06pg.pdf pdf_icon

SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating

MOSTRAR MÁS

Otros transistores... SPP15P10PL , SPP18P06PG , SPP20N05L , SPP22N05 , SPP77N05 , SPP80N05 , SPP80N05L , SPP80N06S-08 , STP80NF70 , SPP80P06PG , SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH .

History: P2A06BT | SI8810 | IRFPE30PBF | STD10PF06-1 | PM557BA | CEDM7001VL | CED12N10L

 

 
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