Справочник MOSFET. SPP80P06P

 

SPP80P06P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPP80P06P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 340 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 115 nC
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 1252 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
   Тип корпуса: PG-TO220-3

 Аналог (замена) для SPP80P06P

 

 

SPP80P06P Datasheet (PDF)

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf

SPP80P06P SPP80P06P

SPP80P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating temperature

 ..2. Size:242K  inchange semiconductor
 spp80p06p.pdf

SPP80P06P SPP80P06P

isc P-Channel MOSFET Transistor SPP80P06PISPP80P06PFEATURESStatic drain-source on-resistance:RDS(on)0.023Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION175 operating temperatureAvalanche rateddv/dt ratedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 0.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf

SPP80P06P SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche ratedContinuous drain current ID -80 A dv/dt rated 175C operating temperaturePin 1 PIN 2/4 PIN 3Type Package Lead freeG D SSPP80P06P G PG-TO220-3 Yes PG-TO263-3SPB80P06P G

 0.2. Size:515K  infineon
 spp80p06pg.pdf

SPP80P06P SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating

 0.3. Size:821K  cn vbsemi
 spp80p06pg.pdf

SPP80P06P SPP80P06P

SPP80P06PGwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

 0.4. Size:819K  cn vbsemi
 spp80p06ph.pdf

SPP80P06P SPP80P06P

SPP80P06PHwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

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