SPP80P06P. Аналоги и основные параметры

Наименование производителя: SPP80P06P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 340 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 18 ns

Cossⓘ - Выходная емкость: 1252 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm

Тип корпуса: PG-TO220-3

Аналог (замена) для SPP80P06P

- подборⓘ MOSFET транзистора по параметрам

 

SPP80P06P даташит

 ..1. Size:606K  infineon
 spp80p06ph spp80p06p spp80p06ph.pdf pdf_icon

SPP80P06P

SPP80P06P H SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating temperature

 ..2. Size:242K  inchange semiconductor
 spp80p06p.pdf pdf_icon

SPP80P06P

isc P-Channel MOSFET Transistor SPP80P06P ISPP80P06P FEATURES Static drain-source on-resistance RDS(on) 0.023 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION 175 operating temperature Avalanche rated dv/dt rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 0.1. Size:387K  1
 spb80p06pg spp80p06pg.pdf pdf_icon

SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Continuous drain current ID -80 A dv/dt rated 175 C operating temperature Pin 1 PIN 2/4 PIN 3 Type Package Lead free G D S SPP80P06P G PG-TO220-3 Yes PG-TO263-3 SPB80P06P G

 0.2. Size:515K  infineon
 spp80p06pg.pdf pdf_icon

SPP80P06P

SPP80P06P G SPB80P06P G SIPMOS Power-Transistor Features Product Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement mode Drain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche rated Continuous drain current ID -80 A dv/dt rated dv/dt rated 175 C operating temperature 175 C operating

ПОКАЗАТЬ ЕЩЁ

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