SPP80P06PG Todos los transistores

 

SPP80P06PG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP80P06PG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1252 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: PG-TO220-3
 

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SPP80P06PG Datasheet (PDF)

 ..1. Size:387K  1
spb80p06pg spp80p06pg.pdf pdf_icon

SPP80P06PG

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche ratedContinuous drain current ID -80 A dv/dt rated 175C operating temperaturePin 1 PIN 2/4 PIN 3Type Package Lead freeG D SSPP80P06P G PG-TO220-3 Yes PG-TO263-3SPB80P06P G

 ..2. Size:515K  infineon
spp80p06pg.pdf pdf_icon

SPP80P06PG

SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating

 ..3. Size:821K  cn vbsemi
spp80p06pg.pdf pdf_icon

SPP80P06PG

SPP80P06PGwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

 5.1. Size:606K  infineon
spp80p06ph spp80p06p spp80p06ph.pdf pdf_icon

SPP80P06PG

SPP80P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating temperature

Otros transistores... SPP18P06PG , SPP20N05L , SPP22N05 , SPP77N05 , SPP80N05 , SPP80N05L , SPP80N06S-08 , SPP80P06P , 13N50 , SPR80N03 , SPU07N20G , SPW55N80C3 , SQ1420EEH , SQ1421EEH , SQ1431EH , SQ1470AEH , SQ1470EH .

History: FDFM2P110 | TSU5N65M

 

 
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