SPP80P06PG - аналоги, даташиты, параметры транзистора

SPP80P06PG Datasheet (PDF)

..1. Size:387K 1
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SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche ratedContinuous drain current ID -80 A dv/dt rated 175C operating temperaturePin 1 PIN 2/4 PIN 3Type Package Lead freeG D SSPP80P06P G PG-TO220-3 Yes PG-TO263-3SPB80P06P G

..2. Size:515K infineon
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SPP80P06P G SPB80P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating

..3. Size:821K cn vbsemi
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SPP80P06PGwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)P

5.1. Size:606K infineon
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SPP80P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel P-Channel Drain source voltage VDS -60 V Enhancement mode Enhancement modeDrain-source on-state resistance RDS(on) 0.023 Avalanche rated Avalanche ratedContinuous drain current ID -80 A dv/dt rated dv/dt rated 175C operating temperature 175C operating temperature