SQD40P10-40L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQD40P10-40L
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 301 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de SQD40P10-40L MOSFET
SQD40P10-40L datasheet
sqd40p10-40l.pdf
SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.040 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 4.5 V 0.048 AEC-Q101 Qualifiedd ID (A) - 38 100 % Rg and
sqd40n10-25.pdf
SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.029 AEC-Q101 Qualified ID (A) 40 Material categorization Configuration Single
sqd40081el.pdf
SQD40081EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-252 TO TrenchFET power MOSFET Package with low thermal resistance Drain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S D S G Top View PRODUCT S
sqd40n06-14l.pdf
SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.014 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.017 100 % Rg and UIS Tested ID (A) 40 Material categorization Configuration Single
Otros transistores... SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , 20N50 , SQD45P03-12 , SQD50N02-04L , SQD50N03-06P , SQD50N03-09 , SQD50N03-4M0L , SQD50N04-09H , SQD50N04-3M5L , SQD50N04-4M1 .
Liste
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