SQD40P10-40L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQD40P10-40L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 96 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 301 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET SQD40P10-40L

SQD40P10-40L Datasheet (PDF)

..1. Size:171K vishay
sqd40p10-40l.pdf

SQD40P10-40Lwww.vishay.comVishay SiliconixAutomotive P-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 100 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.040 Package with Low Thermal ResistanceRDS(on) () at VGS = - 4.5 V 0.048 AEC-Q101 QualifieddID (A) - 38 100 % Rg and

9.1. Size:172K vishay
sqd40n10-25.pdf

SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization:Configuration Single

9.2. Size:235K vishay
sqd40081el.pdf

SQD40081ELwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESTO-252TO TrenchFET power MOSFET Package with low thermal resistanceDrain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please see www.vishay.com/doc?99912SDSGTop ViewPRODUCT S

9.3. Size:170K vishay
sqd40n06-14l.pdf

SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization:Configuration Single

9.4. Size:167K vishay
sqd40n04-10a.pdf

SQD40N04-10Awww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 100 % Rg and UIS TestedConfiguration Single

9.5. Size:151K vishay
sqd40n04.pdf

SQD40N04-10AVishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 AEC-Q101 QualifieddConfiguration Single Compliant to Ro

9.6. Size:1347K cn vbsemi
sqd40n06-14.pdf

SQD40N06-14www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

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