All MOSFET. SQD40P10-40L Datasheet

 

SQD40P10-40L Datasheet and Replacement


   Type Designator: SQD40P10-40L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-252
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SQD40P10-40L Datasheet (PDF)

 ..1. Size:171K  vishay
sqd40p10-40l.pdf pdf_icon

SQD40P10-40L

SQD40P10-40Lwww.vishay.comVishay SiliconixAutomotive P-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 100 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.040 Package with Low Thermal ResistanceRDS(on) () at VGS = - 4.5 V 0.048 AEC-Q101 QualifieddID (A) - 38 100 % Rg and

 9.1. Size:172K  vishay
sqd40n10-25.pdf pdf_icon

SQD40P10-40L

SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization:Configuration Single

 9.2. Size:235K  vishay
sqd40081el.pdf pdf_icon

SQD40P10-40L

SQD40081ELwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESTO-252TO TrenchFET power MOSFET Package with low thermal resistanceDrain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please see www.vishay.com/doc?99912SDSGTop ViewPRODUCT S

 9.3. Size:170K  vishay
sqd40n06-14l.pdf pdf_icon

SQD40P10-40L

SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization:Configuration Single

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 4N65KL-T2Q-R | SQ2361ES | TMD7N65H | PK5V8EN | IPS80R750P7 | TK3A60DA | MTC5806Q8

Keywords - SQD40P10-40L MOSFET datasheet

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 SQD40P10-40L equivalent finder
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 SQD40P10-40L replacement

 

 
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