All MOSFET. SQD40P10-40L Datasheet

 

SQD40P10-40L Datasheet and Replacement


   Type Designator: SQD40P10-40L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-252
 

 SQD40P10-40L substitution

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SQD40P10-40L Datasheet (PDF)

 ..1. Size:171K  vishay
sqd40p10-40l.pdf pdf_icon

SQD40P10-40L

SQD40P10-40Lwww.vishay.comVishay SiliconixAutomotive P-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 100 TrenchFET Power MOSFETRDS(on) () at VGS = - 10 V 0.040 Package with Low Thermal ResistanceRDS(on) () at VGS = - 4.5 V 0.048 AEC-Q101 QualifieddID (A) - 38 100 % Rg and

 9.1. Size:172K  vishay
sqd40n10-25.pdf pdf_icon

SQD40P10-40L

SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization:Configuration Single

 9.2. Size:235K  vishay
sqd40081el.pdf pdf_icon

SQD40P10-40L

SQD40081ELwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESTO-252TO TrenchFET power MOSFET Package with low thermal resistanceDrain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization:for definitions of compliance please see www.vishay.com/doc?99912SDSGTop ViewPRODUCT S

 9.3. Size:170K  vishay
sqd40n06-14l.pdf pdf_icon

SQD40P10-40L

SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization:Configuration Single

Datasheet: SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , 2N60 , SQD45P03-12 , SQD50N02-04L , SQD50N03-06P , SQD50N03-09 , SQD50N03-4M0L , SQD50N04-09H , SQD50N04-3M5L , SQD50N04-4M1 .

Keywords - SQD40P10-40L MOSFET datasheet

 SQD40P10-40L cross reference
 SQD40P10-40L equivalent finder
 SQD40P10-40L lookup
 SQD40P10-40L substitution
 SQD40P10-40L replacement

 

 
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