SQD40P10-40L Specs and Replacement

Type Designator: SQD40P10-40L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 301 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-252

SQD40P10-40L substitution

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SQD40P10-40L datasheet

 ..1. Size:171K  vishay
sqd40p10-40l.pdf pdf_icon

SQD40P10-40L

SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 100 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 10 V 0.040 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 4.5 V 0.048 AEC-Q101 Qualifiedd ID (A) - 38 100 % Rg and... See More ⇒

 9.1. Size:172K  vishay
sqd40n10-25.pdf pdf_icon

SQD40P10-40L

SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.029 AEC-Q101 Qualified ID (A) 40 Material categorization Configuration Single ... See More ⇒

 9.2. Size:235K  vishay
sqd40081el.pdf pdf_icon

SQD40P10-40L

SQD40081EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-252 TO TrenchFET power MOSFET Package with low thermal resistance Drain connected to tab 100 % Rg and UIS tested AEC-Q101 qualified Material categorization for definitions of compliance please see www.vishay.com/doc?99912 S D S G Top View PRODUCT S... See More ⇒

 9.3. Size:170K  vishay
sqd40n06-14l.pdf pdf_icon

SQD40P10-40L

SQD40N06-14L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.014 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.017 100 % Rg and UIS Tested ID (A) 40 Material categorization Configuration Single ... See More ⇒

Detailed specifications: SQD23N06-31L, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, SQD40N10-25, 20N50, SQD45P03-12, SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1

Keywords - SQD40P10-40L MOSFET specs

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