SQD50N05-11L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQD50N05-11L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.5 nS

Cossⓘ - Capacitancia de salida: 345 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO-252

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SQD50N05-11L datasheet

 ..1. Size:170K  vishay
sqd50n05-11l.pdf pdf_icon

SQD50N05-11L

SQD50N05-11L www.vishay.com Vishay Siliconix Automotive N-Channel 50 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 50 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.011 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.015 AEC-Q101 Qualifiedd ID (A) 50 Material categorization Configuration Single

 7.1. Size:105K  vishay
sqd50n03-4m0l.pdf pdf_icon

SQD50N05-11L

SQD50N03-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0031 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0040 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single

 7.2. Size:166K  vishay
sqd50n04-09h.pdf pdf_icon

SQD50N05-11L

SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single 100 % Rg and UIS Tested D AEC-Q101 Qualifiedd TO-252

 7.3. Size:171K  vishay
sqd50n03-06p.pdf pdf_icon

SQD50N05-11L

SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0060 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0085 Material categorization ID (A) 50 For definitions of compliance please see Configuration Singl

Otros transistores... SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L, SQD50N04-5M0, SQD50N04-5M6, IRF1405, SQD50N06-07L, SQD50N06-09L, SQD50N10-8M9L, SQD50N30-4M0L, SQD50P03-07, SQD50P04-09L, SQD50P04-13L, SQD50P06-15L