SQD50P03-07 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SQD50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.007 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.011 Material categorization:ID (A) - 50For definitions of compliance please see Configuration

SQD50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0155 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedID (A) - 50 Material categorization:Configuration

SQD50P04-09Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.0094 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.0190 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguratio

SQD50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 Material categorization:ID (A) - 50For definitions of compliance please see Configuratio

SQD50P08-28Vishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 80DefinitionRDS(on) () at VGS = - 10 V 0.028 TrenchFET Power MOSFETID (A) - 48 AEC-Q101 QualifieddConfiguration Single 100 % Rg and UIS TestedSTO-252 Compliant to RoHS Directive 2002/95/ECGDrain

SQD50P04-13Lwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.013 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.022 Package with Low Thermal ResistanceID (A) - 50 100 % Rg and UIS TestedConfiguration

SQD50P06-15Lwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet