SQD50P03-07 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQD50P03-07

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 766 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO-252

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SQD50P03-07 datasheet

 ..1. Size:170K  vishay
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SQD50P03-07

SQD50P03-07 www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 10 V 0.007 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.011 Material categorization ID (A) - 50 For definitions of compliance please see Configuration

 7.1. Size:163K  vishay
sqd50p06-15l.pdf pdf_icon

SQD50P03-07

SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0155 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0200 AEC-Q101 Qualified ID (A) - 50 Material categorization Configuration

 7.2. Size:169K  vishay
sqd50p04-09l.pdf pdf_icon

SQD50P03-07

SQD50P04-09L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.0094 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.0190 Package with Low Thermal Resistance ID (A) - 50 100 % Rg and UIS Tested Configuratio

 7.3. Size:177K  vishay
sqd50p08-25l.pdf pdf_icon

SQD50P03-07

SQD50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 80 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.031 Material categorization ID (A) - 50 For definitions of compliance please see Configuratio

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