SQJ963EP Todos los transistores

 

SQJ963EP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQJ963EP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 26.5 nC

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 0.085 Ohm

Empaquetado / Estuche: PowerPAK-SO-8L

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SQJ963EP Datasheet (PDF)

1.1. sqj963ep.pdf Size:186K _update

SQJ963EP
SQJ963EP

SQJ963EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition RDS(on) () at VGS = - 10 V 0.085 • TrenchFET® Power MOSFET RDS(on) () at VGS = - 4.5 V 0.115 • AEC-Q101 Qualifiedd ID (A) per leg - 8 • 100 % Rg and UIS Tested Configuration Dual

5.1. sqj960ep.pdf Size:154K _update

SQJ963EP
SQJ963EP

SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 60 • AEC-Q101 Qualified RDS(on) () at VGS = 10 V 0.036 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.046 • Material categorization: ID (A) per leg 8 For definitions of compliance please see Configuration

5.2. sqj968ep.pdf Size:223K _update

SQJ963EP
SQJ963EP

SQJ968EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 60 • AEC-Q101 qualified RDS(on) (Ω) at VGS = 10 V 0.0336 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.0444 • Material categorization: ID (A) per leg 18 for definitions of compliance please see Configuration

 5.3. sqj962ep.pdf Size:155K _update

SQJ963EP
SQJ963EP

SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) 60 • AEC-Q101 Qualified RDS(on) () at VGS = 10 V 0.060 • 100 % Rg and UIS Tested RDS(on) () at VGS = 4.5 V 0.080 • Material categorization: ID (A) per leg 8 For definitions of compliance please see Configuration

5.4. sqj964ep.pdf Size:144K _update

SQJ963EP
SQJ963EP

SQJ964EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) (Ω) at VGS = 10 V 0.028 • TrenchFET® Power MOSFET ID (A) per leg 8 • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested Configuration Dual • Compliant to RoHS Directive 2002/95/EC Powe

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