All MOSFET. SQJ963EP Datasheet

 

SQJ963EP Datasheet and Replacement


   Type Designator: SQJ963EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ963EP Datasheet (PDF)

 ..1. Size:186K  vishay
 sqj963ep.pdf pdf_icon

SQJ963EP

SQJ963EPwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.085 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.115 AEC-Q101 QualifieddID (A) per leg - 8 100 % Rg and UIS TestedConfiguration Dual

 9.1. Size:155K  vishay
 sqj962ep.pdf pdf_icon

SQJ963EP

SQJ962EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.060 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.080 Material categorization:ID (A) per leg 8For definitions of compliance please see Configuration

 9.2. Size:223K  vishay
 sqj968ep.pdf pdf_icon

SQJ963EP

SQJ968EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0336 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0444 Material categorization: ID (A) per leg 18for definitions of compliance please see Configuration

 9.3. Size:154K  vishay
 sqj960ep.pdf pdf_icon

SQJ963EP

SQJ960EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.036 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.046 Material categorization:ID (A) per leg 8For definitions of compliance please see Configuration

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Datasheet: SQJ912EP , SQJ940EP , SQJ941EP , SQJ942EP , SQJ951EP , SQJ952EP , SQJ960EP , SQJ962EP , IRF1010E , SQJ964EP , SQJ968EP , SQJ970EP , SQJ980AEP , SQJ980EP , SQJ992EP , SQJQ402E , SQS400EN .

History: TK31E60W

Keywords - SQJ963EP MOSFET datasheet

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