SQJ963EP Specs and Replacement
Type Designator: SQJ963EP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: POWERPAK-SO-8L
SQJ963EP substitution
- MOSFET ⓘ Cross-Reference Search
SQJ963EP datasheet
sqj962ep.pdf
SQJ962EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.060 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.080 Material categorization ID (A) per leg 8 For definitions of compliance please see Configuration... See More ⇒
sqj968ep.pdf
SQJ968EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0336 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0444 Material categorization ID (A) per leg 18 for definitions of compliance please see Configuration ... See More ⇒
sqj960ep.pdf
SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.036 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.046 Material categorization ID (A) per leg 8 For definitions of compliance please see Configuration... See More ⇒
Detailed specifications: SQJ912EP, SQJ940EP, SQJ941EP, SQJ942EP, SQJ951EP, SQJ952EP, SQJ960EP, SQJ962EP, IRF9540N, SQJ964EP, SQJ968EP, SQJ970EP, SQJ980AEP, SQJ980EP, SQJ992EP, SQJQ402E, SQS400EN
Keywords - SQJ963EP MOSFET specs
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