SRADM1002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRADM1002
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: LCC-28T
Búsqueda de reemplazo de SRADM1002 MOSFET
SRADM1002 Datasheet (PDF)
sradm1002.pdf

SENSITRON SRADM1002 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES: Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad (Level R) Fast Switching
sradm1007.pdf

SENSITRON SRADM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5405, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 55, Range: 90m VGS = -20V, VDS = 100V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-0.5 package Near equivalent to IRHNJ7130 MAXIMUM RATINGS ALL RATINGS AR
sradm1004.pdf

SENSITRON SRADM1004 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5399, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-2 package Near equivalent to IRHNA67260 MAXIMUM RAT
sradm1005.pdf

SRADM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5403, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened,
Otros transistores... SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , SQS840EN , SQS850EN , SQV120N10-3M8 , SQV90N06-05 , CS150N03A8 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 , SRADM1007 , SRADM1008 , SRC11N65TC , SRC11N65TF .
History: SQJ148EP | HM4885 | APT50M85B2VR | KMB6D6N30Q | MTB600N03N3 | RSS040P03FU6TB | 2SK1725
History: SQJ148EP | HM4885 | APT50M85B2VR | KMB6D6N30Q | MTB600N03N3 | RSS040P03FU6TB | 2SK1725



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