SRM10N65TC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRM10N65TC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 171 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.81 Ohm
Paquete / Cubierta: TO-220C
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SRM10N65TC Datasheet (PDF)
srm10n65.pdf
Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
srm10n60.pdf
Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
Otros transistores... SRC7N65D1 , SRC7N65DTR , SRC7N65TC , SRC7N65TF , SRK7002LT1G , SRM10N60TF , SRM10N60TC , SRM10N65TF , IRFB31N20D , SRM12N65TF , SRM12N65TC , SRM20N65TF , SRM20N65TC , SRM2N60 , SRM4N60D1 , SRM4N60DTR , SRM4N60U .
History: SQS482EN | SRC4N65DTR | STF11N65M2
History: SQS482EN | SRC4N65DTR | STF11N65M2
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