SRM10N65TC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRM10N65TC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 171 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.81 Ohm

Encapsulados: TO-220C

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SRM10N65TC datasheet

 6.1. Size:251K  sanrise-tech
 srm10n65.pdf pdf_icon

SRM10N65TC

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65 General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 7.1. Size:251K  sanrise-tech
 srm10n60.pdf pdf_icon

SRM10N65TC

Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60 General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

Otros transistores... SRC7N65D1, SRC7N65DTR, SRC7N65TC, SRC7N65TF, SRK7002LT1G, SRM10N60TF, SRM10N60TC, SRM10N65TF, IRFB31N20D, SRM12N65TF, SRM12N65TC, SRM20N65TF, SRM20N65TC, SRM2N60, SRM4N60D1, SRM4N60DTR, SRM4N60U