SRM10N65TC Datasheet and Replacement
Type Designator: SRM10N65TC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 171 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.81 Ohm
Package: TO-220C
SRM10N65TC substitution
SRM10N65TC Datasheet (PDF)
srm10n65.pdf

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
srm10n60.pdf

Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
Datasheet: SRC7N65D1 , SRC7N65DTR , SRC7N65TC , SRC7N65TF , SRK7002LT1G , SRM10N60TF , SRM10N60TC , SRM10N65TF , IRFZ46N , SRM12N65TF , SRM12N65TC , SRM20N65TF , SRM20N65TC , SRM2N60 , SRM4N60D1 , SRM4N60DTR , SRM4N60U .
History: NDB410B | AO5401E | IPB70N12S3-11 | KP980A | KP981BC
Keywords - SRM10N65TC MOSFET datasheet
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History: NDB410B | AO5401E | IPB70N12S3-11 | KP980A | KP981BC



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