IXTH13N110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTH13N110
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.92 Ohm
   Paquete / Cubierta: TO247

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IXTH13N110 Datasheet (PDF)

..1. Size:46K ixys
ixth13n110.pdf

IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52

7.1. Size:98K ixys
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf

VDSS ID25 RDS(on)IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFETIXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 11N80 11

8.1. Size:142K ixys
ixth130n10t ixtq130n10t.pdf

VDSS = 100VIXTH130N10TTrenchMVTMID25 = 130AIXTQ130N10TPower MOSFET RDS(on) 9.1m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 VD(TAB)SVDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 20 VTO-3P (IXTQ)ID25 TC = 25C 130 AILRMS Lead C

8.2. Size:126K ixys
ixth130n20t.pdf

Preliminary Technical InformationIXTH130N20T VDSS = 200VTrenchHVTMID25 = 130APower MOSFET RDS(on) 16m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C; RGS = 1M 200 VVGSM Transient 30 VID25 TC = 25C 130 AILRMS Lead Current Limit, RMS

8.3. Size:260K inchange semiconductor
ixth130n10t.pdf

isc N-Channel MOSFET Transistor IXTH130N10TFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV G

Otros transistores... IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A , IXTH12N50MA , IXTH12N50MB , IXTH12N90 , EMB04N03H , IXTH13N80 , IXTH14N100 , IXTH14N80 , IXTH15N35MA , IXTH15N35MB , IXTH15N40MA , IXTH15N40MB , IXTH15N60 .

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